Tuning Out-of-Plane Spin Polarization Using in-Plane Magnetic Fields in a Quasi-One-Dimensional Quantum Wire Embedded in (110) Plane

doi:10.1088/0256-307X/31/3/037305

Chin. Phys. Lett.

2014, Vol. 31

Issue (03): 037305 DOI: 10.1088/0256-307X/31/3/037305

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

Tuning Out-of-Plane Spin Polarization Using in-Plane Magnetic Fields in a Quasi-One-Dimensional Quantum Wire Embedded in (110) Plane

SUN Jin-Fang^1**, CHENG Fang²

¹The State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
²Department of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410004

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SUN Jin-Fang, CHENG Fang 2014 Chin. Phys. Lett. 31 037305

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Abstract We investigate theoretically the combination effect of an in-plane magnetic field and spin-orbit interactions (SOIs) on the spin and charge transport property of a quasi-one-dimensional quantum wire embedded in the (110) crystallographic plane. We find that the oscillations of the conductance induced by the SOIs become more significant and different for the spin-up and spin-down electrons in the presence of the in-plane magnetic field. The conductance exhibits a significant anisotropic behavior and electrons exhibit out-of-plane spin polarization which can be tuned by an in-plane magnetic field. These features offer us an efficient way to control SOI-induced spin transport using in-plane magnetic fields.

Received: 24 December 2013 Published: 28 February 2014

PACS:	73.23.-b	(Electronic transport in mesoscopic systems)
	71.70.Ej	(Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)
	73.63.Nm	(Quantum wires)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/31/3/037305 OR https://cpl.iphy.ac.cn/Y2014/V31/I03/037305

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	CHENG Fang

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