| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Degradation Characteristics of Resistive Switching Memory Devices Correlated with Electric Field Induced Ion-Migration Effect of Anode |
| LIU Rui, QIU Gang, CHEN Bing, GAO Bin, KANG Jin-Feng** |
Institute of Microelectronics, Peking University, Beijing 100871
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| Cite this article: |
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LIU Rui, QIU Gang, CHEN Bing et al 2013 Chin. Phys. Lett. 30 117104 |
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Abstract The electrode effect of resistive switching memory devices on resistive switching behaviors is studied. Compared to TiN- or Ti-electrode devices, significantly reduced switching parameters such as resistance-ratio of high- and low-resistance states and set-voltage are observed experimentally in the Al-electrode devices when a positive voltage bias is applied to the Al-electrode during the forming process. An electric-field induced metal-ion-migration effect is proposed to elucidate the observed electrode dependence of the resistive switching behaviors in the resistive switching memory devices. The further measured data identify the validity of the proposed mechanism.
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Received: 02 July 2013
Published: 30 November 2013
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| PACS: |
71.30.+h
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(Metal-insulator transitions and other electronic transitions)
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77.55.-g
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(Dielectric thin films)
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73.90.+f
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(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
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