| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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A Comparative Study of Ballistic Transport Models for Nanowire MOSFETs |
| ZHANG Li-Ning1,2, MEI Jin-He2, ZHANG Xiang-Yu2, TAO Jin2, HU Yue2, HE Jin1,2**, CHAN Mansun3 |
1School of Electronics and Computer Sciences, Peking University, Beijing 100871
2Peking University Shenzhen SOC Key Laboratory, PKU-HKUST Shenzhen-Hongkong Institution,Peking Univesity Shenzhen Institute, Shenzhen 518055
3Department of ECE, The Hong Kong University of Science & Technology, Clear Water Bay, Hong Kong
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| Cite this article: |
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ZHANG Li-Ning, MEI Jin-He, ZHANG Xiang-Yu et al 2013 Chin. Phys. Lett. 30 117102 |
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Abstract We comparatively study two representative ballistic transport models of nanowire metal-oxide-semiconductor field effect transistors, i.e. the Natori model and the Jiménez model. The limitations and applicability of both the models are discussed. Then the Jiménez model is extended to include atomic dispersion relations and is compared with the Natori model from the aspects of ballistic current and quantum capacitance. It is found that the Jiménez model can produce similar results compared with the more complex Natori model even at very small nanowire dimensions.
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Received: 20 June 2013
Published: 30 November 2013
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[1] Kobayashi M and Hiramoto T 2008 J. Appl. Phys. 103 053709
[2] Xu N, Wang B, Sun H and Kong F 2010 Chin. Phys. B 19 117202
[3] Neophytou N, Kim S G, Klimech G and Kosina H 2010 J. Appl. Phys. 107 113701
[4] Neophytou N, paul A, Lundstrom M and Klimeck G 2008 IEEE Trans. Electron Devices 55 1286
[5] Wang J, Rahman A, Ghosh A, Klimeck G and Lunstrom M 2005 Appl. Phys. Lett. 86 093113
[6] Michetti P, Mugnaini G and Iannaccone G 2009 IEEE Trans. Electron Devices 56 1402
[7] Natori K 1994 J. Appl. Phys. 76 4879
[8] Lundstrom M S and Guo J 2006 Nanoscale transistors: Device Physics, Modeling and Simuilation (New York: Springer)
[9] Rahman A, Guo J, Datta S and Lundstrom M S 2003 IEEE Trans. Electron Devices 50 1853
[10] Natori K 2008 IEEE Trans. Electron Devices 55 2877
[11] Jiménez D, S áenz J J, I?íquez B, Su? éJ, Marsal L F and Parllarès J 2003 J. Appl. Phys. 94 1061
[12] Lee Y, Kakushima K, Shiraishi K, Natori K and Iwai H 2010 J. Appl. Phys. 107 113705
[13] Lee Y, Kakushima K, Shiraishi K, Natori K and Iwai H 2010 Appl. Phys. Lett. 97 032101
[14] Paul B C, Tu R, Fujita S, Okajima M, Lee T H and Nishi Y 2007 IEEE Trans. Electron Devices 54 1637
[15] I?íquez B, Jiménez D, Roig J, Hamid H A, Marsal L F and Parllarès J 2005 IEEE Trans. Electron Devices 52 1868
[16] Gnani E, Reggiani S, Gnudi A, Parruccini P, Colle R, Rudan M and Baccarani G 2007 IEEE Trans. Electron Devices 54 2243
[17] Luryi S 1988 Appl. Phys. Lett. 52 501
[18] John D L, Castro L C and Pulfrey D L 2004 J. Appl. Phys. 96 5180
[19] Slater J C and Koster G F 1954 Phys. Rev. 94 1498
[20] Boykin T B, Klimeck G and Oyafuso F 2004 Phys. Rev. B 69 115201
[21] Wang J, Polizzi E and Lunstrom M 2004 J. Appl. Phys. 96 2192 |
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