| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of a Highly Metallic Surface State on the Magneto-Transport Properties of Single Crystal Bi Films |
| YIN Shu-Li, LIANG Xue-Jin, ZHAO Hong-Wu** |
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
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| Cite this article: |
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YIN Shu-Li, LIANG Xue-Jin, ZHAO Hong-Wu 2013 Chin. Phys. Lett. 30 087305 |
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Abstract The magneto-transport properties of thin single crystal Bi films epitaxial grown on Si (111)-7×7 surfaces are investigated systematically as functions of film thickness (5–55 nm) and temperature. Under a perpendicular magnetic field, the positive magnetoresistance (PMR) effect is normally found, and its curve shapes are evolved systematically with film thickness. In contrast, under parallel magnetic fields the PMR effect observed for thinner Bi films develops into the negative magnetoresistance effect with the increasing magnetic field for the thicker Bi film. Our analysis indicates that there exists strong competition between the weak anti-localization effect in the surface states and the weak-localization effect in the bulk states of the Bi film, which induces the anomalous changes in the parallel magneto-resistance curves. The temperature-dependent experiments further demonstrate that the surface state plays an important role in the magneto-transport process of Bi films.
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Received: 08 April 2013
Published: 21 November 2013
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| PACS: |
73.43.Qt
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(Magnetoresistance)
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73.25.+i
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(Surface conductivity and carrier phenomena)
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73.20.At
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(Surface states, band structure, electron density of states)
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[1] Roushan P, Seo J, Parker C V, Hor Y S, Hsieh D, Qian D, Richardella A, Hasan M Z, Cava R J and Yazdani A 2009 Nature 460 1106
[2] Hsieh D, Xia Y, Qian D, Wray L, Dil J H, Meier F, Osterwalder J, Patthey L, Checkelsky J G, Ong N P, Fedorov A V, Lin H, Bansil A, Grauer D, Hor Y S, Cava R J and Hasan M Z 2009 Nature 460 1101
[3] Murakami Shuichi 2006 Phys. Rev. Lett. 97 236805
[4] Wada M, Murakami S, Freimuth F and Bihlmayer G 2011 Phys. Rev. B 83 121310(R)
[5] Liu Z, Liu C X, Wu Y S, Duan W H, Liu F and Wu J 2011 Phys. Rev. Lett. 107 136805
[6] Emmanouil F, Stéphane P and Marco G 2010 Phys. Rev. B 82 085440
[7] Cottin M C, Bobisch C A, Schaffert J, Jnawali G, Sonntag A, Bihlmayer G and M?ller R 2011 Appl. Phys. Lett. 98 022108
[8] Takayama A, Sato T, Souma S et al 2012 Nano Lett. 12 1776
[9] Christian R A and H?chst H 2001 Phys. Rev. Lett. 87 177602
[10] Koroteev Yu M, Bihlmayer G, Gayone J E, Chulkov E V, Blügel S, Echenique P M and Hofmann Ph 2004 Phys. Rev. Lett. 93 046403
[11] Hofmann P 2006 Prog. Surf. Sci. 81 191
[12] Hirahara T, Nagao T, Matsuda I, Bihlmayer G, Chulkov E V, Koroteev Yu M, Echenique P M, Saito M and Hasegawa S 2006 Phys. Rev. Lett. 97 146803
[13] Hirahara T, Miyamoto K, Matsuda I, Kadono T, Kimura A, Nagao T, Bihlmayer G, Chulkov E V, Qiao S, Shimada K, Namatame H, Taniguchi M and Hasegawa S 2007 Phys. Rev. B 76 153305
[14] Ogrin Yu F, Lutskii V N and Elinson M I 1966 JETP Lett. 3 71
[15] Sandomirskii V B 1967 Sov. Phys. JETP 25 101
[16] Hoffman C A, Meyer J R, Bartoli F J, Venere A Di, Yi X J, Hou C L, Wang H C, Ketterson J B and 1993 Phys. Rev. B 48 11431
[17] Hirahara T, Matsuda I, Yamazaki S, Miyata N and Hasegawa S 2007 Appl. Phys. Lett. 91 202106
[18] Rogacheva E I, Grigorov S N, Nashchekina O N, Lyubchenko S and Dresselhaus M S 2003 Appl. Phys. Lett. 82 2628
[19] Yang F Y, Liu Kai, Hong Kimin, Reich D H, Searson P C and Chien C L 1999 Science 284 1335
[20] Pang F, Liang X J, Liao Z L et al 2010 Chin. Phys. B 19 087201
[21] Cai W W, Pang F, Wang J et al 2007 Rev. Sci. Instrum. 78 065108
[22] Xiao S, Wei D and Jin X 2012 Phys. Rev. Lett. 109 166805
[23] Kim Y S, Brahlek M, Bansal N et al 2011 Phys. Rev. B 84 073109
[24] Wang J, DaSilva Ashley M et al 2011 Phys. Rev. B 83 245438
[25] Olsen J L 1962 Electron Transport in Metals (New York: Interscience)
[26] Hikami S, Larkin A I and Nagaoka Y 1980 Prog. Theor. Phys. 63 707
[27] Komnik Yu F, Berkutov I B and Andrievski V V 2005 Low Temp. Phys. 31 326
[28] Marcano N, Sangiao S, Magén C, Morellón L, Ibarra M R, Plaza M, P érez L and De Teresa J M 2010 Phys. Rev. B 82 125326
[29] Lükermann D, Sologub S, Pfnür H and Tegenkamp C 2011 Phys. Rev. B 83 245425
[30] Zhang H B, Yu H L, Bao D H, Li S W, Wang C X and Yang G W 2012 Phys. Rev. B 86 075102
[31] Liu M, Zhang J et al 2012 Phys. Rev. Lett. 108 036805
[32] Lu H Z, Shi J and Shen S Q 2011 Phys. Rev. Lett. 107 076801 |
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