| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Room-Temperature d0 Ferromagnetism in Nitrogen-Doped In2O3 Films |
| SUN Shao-Hua, WU Ping, XING Peng-Fei** |
Department of Applied Physics, Institute of Advanced Materials Physics, Tianjin Key Laboratory of Low-Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072
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| Cite this article: |
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SUN Shao-Hua, WU Ping, XING Peng-Fei 2013 Chin. Phys. Lett. 30 077503 |
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Abstract N-doped In2O3 films were deposited on fused quartz substrates by radio-frequency magnetron sputtering with different N2 flux. X-ray diffraction patterns, x-ray photoelectron spectroscopy and the optical transmittance spectra indicate that nitrogen has incorporated into the In2O3 lattice. Room-temperature d0 ferromagnetism is observed in all the films. The saturation magnetization increases from 0.73 to 3.5 emu/cm3 when the N2 flux varies from 0 to 10 sccm. The concordant results in structural, compositional, optical and magnetic properties suggest that this d0 ferromagnetism is associated with the N incorporation and may be mediated by the long-range p–p interaction between the N 2p states.
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Received: 06 May 2013
Published: 21 November 2013
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| PACS: |
75.50.Pp
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(Magnetic semiconductors)
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75.70.-i
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(Magnetic properties of thin films, surfaces, and interfaces)
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75.70.Ak
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(Magnetic properties of monolayers and thin films)
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