High Response in aTellurium-Supersaturated Silicon Photodiode

doi:10.1088/0256-307X/30/3/036101

Chin. Phys. Lett.

2013, Vol. 30

Issue (3): 036101 DOI: 10.1088/0256-307X/30/3/036101

CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES

High Response in aTellurium-Supersaturated Silicon Photodiode

WANG Xi-Yuan¹, HUANG Yong-Guang^1**, LIU De-Wei^1,2, ZHU Xiao-Ning¹, ZHU Hong-Liang¹

¹Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083
²Department of Technology and Physics, Zhengzhou University of Light Industry, Zhengzhou 450002

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WANG Xi-Yuan, HUANG Yong-Guang, LIU De-Wei et al 2013 Chin. Phys. Lett. 30 036101

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Abstract Single crystalline silicon supersaturated with tellurium are formed by ion implantation followed by excimer nanosecond pulsed laser melting (PLM). The lattice damaged by ion implantation is restored during the PLM process, and dopants are effectively activated. The hyperdoped layer exhibits high and broad optical absorption from 400 to 2500 nm. The n⁺p photodiodes fabricated from these materials show high response (6.9 A/W at 1000 nm) with reverse bias 12 V at room temperature. The corresponding cut-off wavelength is 1258 nm. The amount of gain and extended cut-off wavelength both increase with increasing reverse bias voltage; above 100% external quantum efficiency is observed even at a reverse bias of 1 V. The cut-off wavelength with 0 V bias is shorter than the commercial silicon detector. This implies that the Burstein-Moss shift is due to hyperdoping. The amount of the extended cut-off wavelength increases with increasing reverse bias voltage, suggesting existence of the Franz–Keldysh effect.

Received: 28 November 2012 Published: 29 March 2013

PACS:	61.72.uf	(Ge and Si)
	61.72.U
	85.60.Gz	(Photodetectors (including infrared and CCD detectors))

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	WANG Xi-Yuan
	HUANG Yong-Guang
	LIU De-Wei
	ZHU Xiao-Ning
	ZHU Hong-Liang

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