| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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AlGaN/GaN MISHEMTs with Sodium-Beta-Alumina as the Gate Dielectrics |
| TIAN Ben-Lang, CHEN Chao, ZHANG Ji-Hua, ZHANG Wan-Li, LIU Xing-Zhao** |
The State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electron Science and Technology of China, Chengdu 610054
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| Cite this article: |
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TIAN Ben-Lang, CHEN Chao, ZHANG Ji-Hua et al 2013 Chin. Phys. Lett. 30 026101 |
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Abstract AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) with sodium beta-alumina (SBA) thin films as the gate dielectrics are studied. AlGaN/GaN metal-semiconductor high-electron-mobility transistors (MESHEMTs) and MISHEMTs with Al2O3 thin-film gate dielectrics are also fabricated for comparative study. The MISHEMTs with SBA gate dielectrics show nearly four orders of magnitude lower gate leakage current and an approximately 60% increase in maximum transconductance, indicating that SBA can serve as an effective dielectric for AlGaN/GaN MISHEMTs. However, SBA gate dielectrics result in threshold voltage modulation of AlGaN/GaN MISHEMTs. Compared with those of AlGaN/GaN MESHEMTs, the threshold voltages of AlGaN/GaN MISHEMTs with Al2O3 gate dielectrics shift negatively from ?5.5 V to ?7.5 V. In contrast with the normally used gate dielectrics, the threshold voltages of MISHEMTs with SBA gate dielectrics shift positively from ?5.5 V to ?3.5 V. Based on an x-ray photoelectron spectrum study and energy band spectrum calculation, the primary mechanism of the threshold voltage modulation is attributed to the decrease in the surface valence-band maximum and the increase in the barrier height by SBA gate dielectrics.
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Received: 01 August 2012
Published: 02 March 2013
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| PACS: |
61.72.uj
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(III-V and II-VI semiconductors)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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77.55.D-
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