GENERAL |
|
|
|
|
Research of Infrared Imaging at Atmospheric Pressure Using a Substrate-Free Focal Plane Array |
WU Jian-Xiong1, CHENG Teng1**, ZHANG Qing-Chuan1, ZHANG Yong1, MAO Liang1, GAO Jie1, CHEN Da-Peng2, WU Xiao-Ping1 |
1CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei 230027 2Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
|
|
Cite this article: |
WU Jian-Xiong, CHENG Teng, ZHANG Qing-Chuan et al 2013 Chin. Phys. Lett. 30 010701 |
|
|
Abstract An equivalent circuit model to the substrate-free focal plane array (FPA) is established. Using this fast and effective model, the performance of infrared (IR) imaging at atmospheric pressure is investigated and it is found that the substrate-free FPA has the ability of IR imaging at atmospheric pressure, whereas it has a slightly degraded noise equivalent temperature difference (NETD) as compared with IR imaging under a high vacuum. This feature is also identified experimentally by a substrate-free FPA with pixel size of 50×50 μm 2. The NETDs are measured to be 160 mK at 10?2 Pa pressure and 1.08 K at atmospheric pressure.
|
|
Received: 08 August 2012
Published: 04 March 2013
|
|
PACS: |
07.57.Kp
|
(Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors)
|
|
07.10.Cm
|
(Micromechanical devices and systems)
|
|
42.30.Va
|
(Image forming and processing)
|
|
|
|
|
[1] Lloyd J M 1975 Thermal Imaging Systems (New York: Plenum Press) [2] Rogalski A 2003 Infrared Detectors: Status Trends in Prog. Quant. Electron. 27 59 [3] Pan L, Zhang Q C, Wu X P Duan Z H, Chen D P Wang W B and Guo Z Y 2004 J. Exp. Mech. 19 403 (in Chinese) [4] Duan Z H, Zhang Q C, Wu X P Pan L, Chen D P Wu X P and Guo Z Y 2003 Chin. Phys. Lett. 20 2130 [5] Li C B, Jiao B B, Shi S L, Chen D P Ye T C, Zhang Q C, Guo Z Y, Dong F L and Miao Z Y 2006 Meas. Sci. Technol. 17 1981 [6] Xiong Z M, Zhang Q C, Gao J, Wu X P Chen D P and Jiao B B 2007 J. Appl. Phys. 102 113524 [7] Shi H T, Zhang Q C, Qian J, Mao L, Cheng T, Gao J, Wu X P, Chen D P and Jiao B B 2009 Opt. Express 17 4367 [8] Cheng T, Zhang Q C, Wu X P, Chen D P and Jiao B B 2008 IEEE Electron Device Lett. 29 1218 [9] Cheng T, Zhang Q C, Chen D P, Shi H T, Gao J and Wu X P 2009 J. Appl. Phys. 105 034505 [10] Jiang X K, Zhang Q C, Shi H T, Mao L, Cheng T and Wu X P 2011 Acta Phys. Sin. 5 054401 (in Chinese) |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|