Chin. Phys. Lett.  2013, Vol. 30 Issue (1): 017901    DOI: 10.1088/0256-307X/30/1/017901
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Current Density-Sensitive Welding of a Semiconductor Nanowire to a Metal Electrode
TAN Yu1, WANG Yan-Guo2**
1 Science College, Hunan Agricultural University, Changsha 410128
2Beijing Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190
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TAN Yu, WANG Yan-Guo 2013 Chin. Phys. Lett. 30 017901
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Abstract In situ welding of a single ZnSe nanowire (NW) to an Au electrode has been successfully achieved by means of current-induced Joule heating. The parameter governing the welding of semiconductor NW to the metal electrode is highly dominated by the current density at the Au-ZnSe NW (M-S) contact because current density at the M-S contact can change the temperature profile along the NW. The self-heating behaviors of the Au-ZnSe NW-Au (M-S-M) nanostructure can be changed from the electrical failure of the ZnSe NW to the melting of the Au electrode localized at the M-S contact when the current density at the M-S junction was adjusted to be larger than in the NW. Consequently, the self-welding is the current density-sensitive and controllable since the current density at the M-S contact can be controlled by adjusting the contact area between the NW and metal electrode. This controlled self-welding may have potential applications in the construction of a complex nanostructure and improvement of the thermal stability of the M-S contact as well as the enhanced performance of the nanodevices based on the M-S-M nanostructure.
Received: 23 August 2012      Published: 04 March 2013
PACS:  79.70.+q (Field emission, ionization, evaporation, and desorption)  
  68.37.Hk (Scanning electron microscopy (SEM) (including EBIC))  
  81.07.De (Nanotubes)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/30/1/017901       OR      https://cpl.iphy.ac.cn/Y2013/V30/I1/017901
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TAN Yu
WANG Yan-Guo
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