Chin. Phys. Lett.  2012, Vol. 29 Issue (3): 038502    DOI: 10.1088/0256-307X/29/3/038502
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
A Novel CMOS Device Capable of Measuring Near-Field Thermal Radiation
FENG Chong, TANG Zhen-An, YU Jun**
School of Electronic Science and Technology, Dalian University of Technology, Dalian 116023
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YU Jun, TANG Zhen-An, FENG Chong 2012 Chin. Phys. Lett. 29 038502
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Abstract We report on the design, fabrication, and characterization of a micro plane-plane geometry CMOS device, which has a heat emitter and a heat receiver, capable of studying the near-field radiative heat transfer at a 550 nm gap. Under high vacuum conditions, the heat emitter is heated by supplying driving currents and heated again after removing the heat receiver. The heating power difference between the two kinds of heating experiments indicates the existence of a proximity effect in the heat transfer between the emitter and the receiver. Our experiments pave the way towards overcoming the construction difficulty of plane-plane geometry with a nanometer gap.
Keywords: 85.40.-e      44.40.+a     
Received: 17 November 2011      Published: 11 March 2012
PACS:  85.40.-e (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)  
  44.40.+a (Thermal radiation)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/29/3/038502       OR      https://cpl.iphy.ac.cn/Y2012/V29/I3/038502
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YU Jun
TANG Zhen-An
FENG Chong
[1] Domoto G A et al 1970 J. Heat Transfer 92 412
[2] Hargreaves C M 1973 Philips Res. Rep. Suppl. 5 1
[3] Xu J B et al 1994 J. Appl. Phys 76 7209
[4] Kittel A et al 2005 Phys. Rev. Lett. 95 1
[5] Wischnath U F et al 2008 Rev. Sci. Instrum. 79 1
[6] Narayanaswamy A et al 2008 Phys. Rev. B 78 1
[7] Rousseau E et al 2009 Nature Photon. 3 514
[8] Smith R A et al 1957 The Detection and Measurement of Infrared Radiation (London: Oxford University) p 46
[9] Paul O et al 1997 Proc. IEEE 523
[10] Pierce J M et al 1981 United States Patent 4267012
[11] Lytle W H 1988 United States Patent 4787958
[12] Yan G Z et al 2001 Sensors and Actuators A 89 135
[13] Andrea I et al 1999 Sensors and Actuators A 76 323
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