| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Tunable Metamorphic Resonant Cavity Enhanced InGaAs Photodetectors Grown on GaAs Substrates |
| LIU Shao-Qing1, HAN Qin1**, ZHU Bin1, YANG Xiao-Hong1, NI Hai-Qiao2, HE Ji-Fang2, WANG Win1, NIU Zhi-Chuan2 |
1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083
2State Key Laboratory for Superlattices and microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083
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| Cite this article: |
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ZHU Bin, YANG Xiao-Hong, WANG Win et al 2012 Chin. Phys. Lett. 29 038501 |
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Abstract Tunable metamorphic InGaAs partially depleted absorber photodiodes with resonant cavity enhanced structure are fabricated on GaAs substrate. Dark-current densities of 7.2×10−7 A/cm2 at 0 V and 3.6×10−4 A/cm2 at −5 V, a high quantum efficiency of 74.4% at 1546 nm, and a 3-dB bandwidth up to 12 GHz are achieved. The full width at half maximum of the detector is about 16 nm. Furthermore, through thermal tuning, the peak wavelength red shifts from 1527 nm to 1544 nm, and a tuning range of 17 nm is realized without fabricating extra tuning electrodes.
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| Keywords:
85.60.Gz
73.40.Kp
81.15.Hi
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Received: 17 November 2011
Published: 11 March 2012
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| PACS: |
85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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