| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of Rapid Thermal Annealing Ambient on Photoluminescence of ZnO Films |
| XU Xiao-Yan, MA Xiang-Yang, JIN Lu, YANG De-Ren** |
| State Key Laboratory of Silicon Materials, and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 |
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| Cite this article: |
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XU Xiao-Yan, MA Xiang-Yang, JIN Lu et al 2012 Chin. Phys. Lett. 29 037301 |
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Abstract The effects of rapid thermal annealing (RTA) ambient on photoluminescence (PL) of sputtered ZnO films are investigated. The RTA at 800°C under either oxygen (O2) or argon (Ar) ambient can remarkably enhance the PL of the ZnO films due to the improved crystallinities of the ZnO films. It is somewhat unexpected that the ZnO film which received the RTA under O2 ambient exhibits weaker near−band-edge (NBE) PL than that which received the RTA under Ar ambient. It is supposed that a certain amount of negatively charged oxygen species exist on the surface of the ZnO film that received the RTA under O2 ambient, leading to a build-in electric field. This in turn reduces the recombination probability of photo-generated electrons and holes, resulting in the suppressed NBE PL.
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| Keywords:
73.61.Jc
78.55.-m
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Received: 11 November 2011
Published: 11 March 2012
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| PACS: |
73.61.Jc
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(Amorphous semiconductors; glasses)
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78.55.-m
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(Photoluminescence, properties and materials)
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| [1] Yu S F, Yuen C, Lau S P, Wang Y G, Lee H W and Tay B K 2003 Appl. Phys. Lett. 83 4288 [2] Liang H K, Yu S F and Yang H Y 2010 Phys. Lett. 96 101116 [3] Heo Y W, Norton D P and Pearton S J 2005 J. Appl. Phys. 98 073502 [4] Yang X T, Du G T, Wang X Q, Wang J Z, Liu B Y, Zhang Y T, Liu D, Liu D L, Ong H C and Yang S R 2003 J. Cryst. Growth 252 [5] Hur T B, Jeen G S, Hwang Y H and Kim H K 2003 J. Appl. Phys. 94 5787 [6] Kang H S, Kang J S, Kim J W and Lee S Y 2004 J. Appl. Phys. 95 1246 [7] Zhao Q, Xu X Y, Song X F, Zhang X Z and Yu D P 2006 Appl. Phys. Lett. 88 033102 [8] Bae S H, Lee S Y, Kim H Y and Im S 2001 Opt. Mater. 17 327 [9] Lin B X, Fu Z X and Jia Y B 2001 Appl. Phys. Lett. 79 943 [10] Yang Y L, Yan H W, Fu Z P, Yang B F, Xia L S, Xu Y D, Zuo J and Li F Q 2006 Solid State Commun. 138 521 [11] Yan Y F, Al Jassim M M and Wei S H 2005 Phys. Rev. B 72 161307(R) [12] Lin Y H, Wang D J, Zhao Q D, Li Z H, Ma Y D and Yang M 2006 Nanotechnology 17 2110 [13] Jin C, Tiwari A and Narayan R J 2005 J. Appl. Phys. 98 083707 [14] Su W Y, Huang J S and Lin C F 2008 J. Cryst. Growth 310 2806 |
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