| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation |
| CUI Jin-Ming1, CHEN Xiang-Dong1, FAN Le-Le2, GONG Zhao-Jun1, ZOU Chong-Wen2, SUN Fang-Wen1**, HAN Zheng-Fu1, GUO Guang-Can1 |
1Key Lab of Quantum Information, University of Science and Technology of China, Hefei 230026
2 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029
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| Cite this article: |
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ZOU Chong-Wen, SUN Fang-Wen, HAN Zheng-Fu et al 2012 Chin. Phys. Lett. 29 036103 |
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Abstract Nitrogen-vacancy defect color centers are created in a high purity single crystal diamond by nitrogen-ion implantation. Both optical spectrum and optically detected magnetic resonance are measured for these artificial quantum emitters. Moreover, with a suitable mask, a lattice composed of nitrogen-vacancy centers is fabricated. Rabi oscillation driven by micro-waves is carried out to show the quality of the ion implantation and potential in quantum manipulation. Along with compatible standard lithography, such an implantation technique shows high potential in future to make structures with nitrogen-vacancy centers for diamond photonics and integrated photonic quantum chip.
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| Keywords:
61.72.-y
71.55.-i
78.56.-a
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Received: 22 November 2011
Published: 11 March 2012
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| PACS: |
61.72.-y
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(Defects and impurities in crystals; microstructure)
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71.55.-i
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(Impurity and defect levels)
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78.56.-a
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(Photoconduction and photovoltaic effects)
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