| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Thermoluminescence Responses of Photon and Electron Irradiated Ge- and Al-Doped SiO2 Optical Fibres |
| H. Wagiran1, I. Hossain1**, D. Bradley2, A. N. H. Yaakob1, T. Ramli1 |
1Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor Darul Takzim, Malaysia
2Department of Physics, University of Surrey, Guildford, GU2 7XH, UK
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| Cite this article: |
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T. Ramli, I. Hossain, H. Wagiran et al 2012 Chin. Phys. Lett. 29 027802 |
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Abstract We carry out a comparison of the thermoluminescence (TL) response of photon and electron irradiated Ge- and Al-doped SiO2 optical fibres, as well as cross-comparison with that of TLD-100. Irradiation is made with 6 MeV electrons and 6 MV photons, for doses ranging from 0.2 Gy to 4.0 Gy. The commercially available Al- and Ge-doped optical fibres produce a linear dose-TL response. The TL yield for both of the doped fibres and also for TLD-100 is greater for electron irradiation than for photon irradiation. The TL yield of the Al-doped fibres is a small fraction of that of Ge-doped fibres (by a factor of 25), the Ge-doped fibres offering a response of 59% of that of TLD-100.
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| Keywords:
78.60.Kn
24.10.Lx
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Received: 16 December 2011
Published: 11 March 2012
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| PACS: |
78.60.Kn
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(Thermoluminescence)
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24.10.Lx
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(Monte Carlo simulations (including hadron and parton cascades and string breaking models))
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