| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Comparative Study of the Characteristics of the Basal Plane Stacking Faults of Nonpolar a−Plane and Semipolar (11 |
| XU Sheng-Rui**, LIN Zhi-Yu, XUE Xiao-Yong, LIU Zi-Yang, MA Jun-Cai, JIANG Teng, MAO Wei, WANG Dang-Hui, ZHANG Jin-Cheng, HAO Yue |
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071
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XU Sheng-Rui, LIN Zhi-Yu, XUE Xiao-Yong et al 2012 Chin. Phys. Lett. 29 017803 |
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Abstract Nonpolar (1120) and semipolar (1122) GaN are grown on r−plane and m−plane sapphire by MOCVD to investigate the characteristics of basal plane stacking faults (BSFs). Transmission electron microscopy reveals that the density of BSFs for the semipolar (1122) and nonpolar a−plane GaN template is 3×105 cm−1 and 8×105 cm−1, respectively. The semipolar (1122) GaN shows an arrowhead−like structure, and the nonpolar a−plane GaN has a much smoother morphology with a streak along the c−axis. Both nonpolar (1120) and semipolar (1122) GaN have very strong BSF luminescence due to the optically active character of the BSFs.
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| Keywords:
78.55.Cr
81.15.Kk
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Received: 13 September 2011
Published: 07 February 2012
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| PACS: |
78.55.Cr
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(III-V semiconductors)
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81.15.Kk
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(Vapor phase epitaxy; growth from vapor phase)
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