| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED |
| WANG Jia-Xing, WANG Lai**, HAO Zhi-Biao, LUO Yi
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Tsinghua National Laboratory for Information Science and Technology/State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084
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| Cite this article: |
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WANG Jia-Xing, WANG Lai, HAO Zhi-Biao et al 2011 Chin. Phys. Lett. 28 118105 |
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Abstract In order to clarify the origin of the efficiency droop effect in InGaN based blue multiple-quantum-well (MQW) light emitting diodes (LEDs), a reasonable model is set up, taking all the possible factor (carrier delocalization, carrier leakage and Auger recombination) into account. By fitting the external quantum efficiency-injection current (η–I) measurements of two LED samples, the validity of the model is demonstrated. The fit results show that the main origin of efficiency droop at a high injection current is carrier leakage. Furthermore it is also indicated that carrier delocalization plays an important role in the efficiency droop effect in those LEDs of large localization degree.
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| Keywords:
81.05.Ea
85.60.Bt
85.60.Jb
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Received: 26 April 2011
Published: 30 October 2011
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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85.60.Jb
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(Light-emitting devices)
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