| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method |
| XIA Xiao-Chuan1, WANG Hui2, ZHAO Yang2, WANG Jin2, ZHAO Jian-Ze1, SHI Zhi-Feng2, LI Xiang-Ping1, LIANG Hong-Wei1, ZHANG Bao-Lin2, DU Guo-Tong1,2**
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1School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024
2State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012
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| Cite this article: |
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XIA Xiao-Chuan, WANG Hui, ZHAO Yang et al 2011 Chin. Phys. Lett. 28 108101 |
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Abstract Arsenic doped p-type ZnO films were grown on n-type silicon substrates using the GaAs interlayer doping method. Under our growth conditions the main doping element is arsenic, which was confirmed by x-ray photoelectroscopy. X-ray diffraction measurements revealed that the p-ZnO:As film was still in the (002) preferred orientation. The Hall test showed that the hole concentration of the p-ZnO:As film was 2.6 × 1017 cm−3. The acceptor level was located at 135 meV above the valance band maximum, according to the low-temperature photoluminescence results. We then fabricated a p-ZnO:As/n-Si heterojunction light-emitting device. Its current-voltage curve showed the typical rectifying behavior of a p–n diode. At forward current injections, the electroluminescence peaks, which cover the ultraviolet-to-visible region, could be clearly detected.
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| Keywords:
81.15.Gh
61.72.Uj
85.30.-z
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Received: 08 January 2011
Published: 28 September 2011
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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61.72.uj
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(III-V and II-VI semiconductors)
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85.30.-z
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(Semiconductor devices)
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