| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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H2-Assistance One-Step Growth of Si Nanowires and Their Growth Mechanism |
| QIU Ming-Xia1, RUAN Shuang-Chen1**, GAO Biao2, HUO Kai-Fu2, ZHAI Jian-Pang1, LI Ling1, LIAO Hui1, XU Xin-Tong1
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1Shenzhen Key Laboratory of Laser Engineering, College of Electronic Science and Technology, Shenzhen University, Shenzhen 518060
2College of Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 |
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| Cite this article: |
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QIU Ming-Xia, RUAN Shuang-Chen, GAO Biao et al 2011 Chin. Phys. Lett. 28 106104 |
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Abstract Large-scale nanowires are grown on Si wafers by the catalyst-free one-step thermal reaction method in Ar/H2 mixture atmosphere at 1000 °C. The x−ray diffraction and energy dispersive x-ray spectroscopy results reveal that the final nanowires are of silicon nanostructures. The field emission scanning electron microscopy shows that these self-organized Si nanowires (SiNWs) possess curly crowns with diameters varying from 10 to 300 nm and lengths of up to several hundreds of micrometers. The transmission electron microscopy indicates that the nanowires are pure Si with amorphous structures. All the measurement results show that no silicon oxide is generated in our products. The growth mechanism is proposed tentatively. Silicon oxide is reduced into Si nanoparticles under the Ar/H2 mixture, which is the main reason for the formation of such SiNWs. Our experiments offer a method of preparing Si nanostructures by simply reducing silicon oxide at high temperature.
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| Keywords:
61.72.Uf
62.23.Hj
34.50.Lf
46.70.-p
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Received: 11 August 2011
Published: 28 September 2011
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[1] Cui Y and Lieber C M 2001 Science 291 851
[2] Gunawan O, Sekaric L, Majumdar A, Rooks M, Appenzeller J, Sleight J W, Guha S and Haensch W 2008 Nano Lett. 8 1566
[3] Zheng G F, Lu W, Jin S and Lieber C M 2004 Adv. Mater. 16 1890
[4] Tian B, Zheng X L, Kempa T J, Fang Y, Yu N F, Yu G H, Huang J L and Lieber C M 2007 Nature 449 885
[5] Li Z, Chen Y, Li X, Kamins T I, Nauka K and Williams R S 2004 Nano Lett. 4 245
[6] Chan C K, Peng H, Liu G, McIlwrath K, Zhang X F, Huggins R A and Cui Y 2008 Nature Nanotechnol. 3 31
[7] Hochbaum A I, Chen R K, Delgado R D, Liang W J, Garnett E C, Najarian M, Majumdar A and Yang P D 2008 Nature 451 163
[8] Morales A M and Lieber C M 1998 Science 279 208
[9] Wu Y, Cui Y, Huynh L, Barrelet C J, Bell D C and Lieber C M 2004 Nano Lett. 4 433
[10] Li W N, Ding Y S, Yuan J K, Gomez S, Suib S L, Galasso F S and DiCarlo J F 2005 J. Phys. Chem. B 109 3291
[11] Ge S P, Jiang K L, Lu X X, Chen Y F, Wang R and Fan S S 2005 Adv. Mater. 17 56
[12] Renard V T, Jublot M, Gergaud P, Cherns P, Rouchon D, Chabli A and Jousseaume V 2009 Nature Nanotechnol. 4 654
[13] Shi X L et al 2008 Sci. Chin. E Tech. Sci. 51 1433
[14] Niu J J , Sha J and Yang D 2004 Physica E 24 278
[15] Pan Z W, Dai Z R, Lee S T and Wang Z L 2001 J. Phys. Chem. B 105 2507
[16] Holmes J D, Johnston K P, Doty R C and Korgel B A 2000 Science 287 1471
[17] Hou Z L, Zhou H F, Yuan J, Kang Y Q, Yang H J, Jin H B and Cao M S 2011 Chin. Phys. Lett. 28 037702
[18] Cheng J, Zou X P, Song W L, Cao M S, Su Y, Yang G Q, Lu X M and Zhang F X 2010 Chin. Phys. Lett. 27 057302
[19] Peng K Q, Hu J J, Yan Y J, Wu Y, Fang H, Xu Y, Lee S T and Zhu J 2006 Adv. Funct. Mater. 16 387
[20] Zhou X T, Hu J Q, Li C P, Ma D D, Lee C S and Lee S T 2003 Chem. Phys. Lett. 369 220
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