CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Mechanical Property Evaluation of GaAs Crystal for Solar Cells |
JIN Min**, FANG Yong-Zheng, SHEN Hui, JIANG Guo-Jian, WANG Zhan-Yong, XU Jia-Yue
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School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 200235
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Cite this article: |
JIN Min, FANG Yong-Zheng, SHEN Hui et al 2011 Chin. Phys. Lett. 28 086101 |
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Abstract The mechanical properties of Si-doped (111) GaAs crystal for solar cells are investigated by means of a microindentation technique. Vickers' microhardness Hv exhibits a nonlinear relationship with the applied load. In the range of 0.1–1 kg, Hv is decreased from 5.59 GPa to 5.03 GPa. Such a phenomenon is explained on the basis of indenter penetration. The Hv value can effectively be presumed by Kick's law, and Meyer's index n is calculated to be 1.90. For the fracture toughness Kc of the GaAs crystal, it also displays nonlinear behavior related to the applied load, which is caused by energy dissipation during the development process of cracks on the wafer.
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Keywords:
61.66.Fn
61.72.Bb
62.20.-x
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Received: 22 December 2010
Published: 28 July 2011
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PACS: |
61.66.Fn
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(Inorganic compounds)
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61.72.Bb
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(Theories and models of crystal defects)
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62.20.-x
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(Mechanical properties of solids)
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[1] Rudolph P and Kiessling F M 2006 J. Crystal Growth 292 532
[2] Chen N F, He H J, Wang Y T and Lin L Y 1997 J. Crystal Growth 173 325
[3] Rudolph P and Jurisch M 1999 J. Crystal Growth 198/199 325
[4] Eichler S, Fliegel W, Jurisch M, Kohler A, Naumann M and Rockoff A 2008 J. Crystal Growth 310 1410
[5] Ishihara T, Murata K and Sato M 1994 J. Crystal Growth 137 375
[6] Jin M, Xu J Y, He Q B, Fang Y Z and Shen H 2011 Mater. Sci. Forum. 663-665 1213
[7] Jin M, Xu J Y, He Q B, Fang Y Z, Shen H, Jiang G J and Wang Z Y 2011 Adv. Mater. Res. 177 219
[8] Wang R, Guo Z L , Zhang X H and Zhai Z X 2003 Sol. Energ. Mater. Sol. C 77 351
[9] Xiang X B, Du W H, Chang X L and Yuan H R 2001 Sol. Energ. Mater. Sol. C 68 97
[10] Sinharoy S, Stan M A, Pal A M, Weizer V G and Smith M A 2000 J. Crystal Growth 221 683
[11] Freundlich A, Newman F, Vilela M F, Monier C, Aguilar L and Street S 2000 J. Crystal Growth 209 481
[12] Wang S L and Pirouz P 2007 Acta Mater. 55 5526
[13] Wang S L and Pirouz P 2007 Acta Mater. 55 5515
[14] Wang H, Zhang Z J, Zhao J T, Xu J Y, Hu G Q and Li P J 2010 Chin. Phys. Lett. 27 026101
[15] Pandya J R, Bhagia L J and Shah A J 1983 Bull. Mater. Sci. 5 79
[16] Ascheron C, Huse C, Kuhn G and Neumann H 1989 Cryst. Res. Technol. 24 33
[17] Vengatesan B, Kanniah N and Ramaswamy P 1986 J. Mater. Sci. Lett. 5 987
[18] Kotru P N, Razdan A K and Wanklyn B M 1989 J. Mater. Sci. 24 793
[19] Bamzai K K, Kotru P N and Wanklyn B M 1991 Cryst. Res. Technol. 26 273
[20] Jin M, Xu J Y, Li X H, Shen H and He Q B 2008 Mater. Sci. Eng. A 472 353
[21] Adachi S 2005 Properties of Group-IV, III–V and II–VI semiconductors (England: Wiley)
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