| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effects of an InGaAs Cap Layer on the Optical Properties of InAs Quantum Dot Molecules |
| TIAN Peng, HUANG Li-Rong**, YUAN Xiu-Hua, HUANG De-Xiu
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Wuhan National Laboratory for Optoelectronics, School of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074
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TIAN Peng, HUANG Li-Rong, YUAN Xiu-Hua et al 2011 Chin. Phys. Lett. 28 067304 |
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Abstract Self-assembled InAs quantum dot molecules are grown on GaAs substrates without following any special protocols by using metal-organic chemical vapor deposition. The effects of indium composition and the thickness of the InGaAs cap layer on the optical properties of InAs quantum dot molecules are investigated by photoluminescence. With increasing indium composition and thickness of the InGaAs cap layer, the ground-state wavelength of the emission spectrum redshifts and the peak intensity decreases. In addition, the structural and optical properties of quantum dots and quantum dot molecules are comparatively studied, and the results show that when quantum dots turn into quantum dot molecules, the emission wavelength red shifts.
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| Keywords:
73.21.La
78.67.Hc
68.65.Hb
81.07.Ta
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Received: 23 February 2011
Published: 29 May 2011
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