| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots |
| YANG Xiao-Guang1, YANG Tao1**, WANG Ke-Fan1, GU Yong-Xian1, JI Hai-Ming1, XU Peng-Fei1, NI Hai-Qiao2, NIU Zhi-Chuan2, WANG Xiao-Dong3, CHEN Yan-Ling3, WANG Zhan-Guo1
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1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2The State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
3Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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YANG Xiao-Guang, YANG Tao, WANG Ke-Fan et al 2011 Chin. Phys. Lett. 28 038401 |
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Abstract We report the fabrication of intermediate-band solar cells (IBSCs) based on quantum dots (QDs), which consists of a standard P-I-N structure with multilayer stacks of InAs/GaAs QDs in the I-layer. Compared with conventional GaAs single-junction solar cells, the IBSCs based on InAs/GaAs QDs show a broader photo-response spectrum (> 1330 nm), a higher short-circle current (about 53% increase) and a stronger radiation hardness. The results have important applications for realizing high efficiency solar cells with stronger radiation hardness.
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| Keywords:
84.60.Jt
78.67.Hc
81.07.-b
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Received: 12 October 2010
Published: 28 February 2011
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| PACS: |
84.60.Jt
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(Photoelectric conversion)
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78.67.Hc
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(Quantum dots)
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81.07.-b
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(Nanoscale materials and structures: fabrication and characterization)
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