| PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES |
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Self-Assembled Wire Arrays and ITO Contacts for Silicon Nanowire Solar Cell Applications |
| YANG Cheng1, ZHANG Gang1, LEE Dae-Young1, LI Hua-Min1, LIM Young-Dae1, YOO Won Jong1**, PARK Young-Jun2, KIM Jong-Min2
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1Sungkyunkwan University, SKKU Advanced Institute of Nano Technology, 300 Cheoncheon-dong, Jangan-gu, Suwon 440-746, Korea
2Samsung Electronics Co. Ltd., San 14-1 Nongseo-dong, Giheung-gu, Yongin 446-712, Korea
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| Cite this article: |
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YANG Cheng, ZHANG Gang, LEE Dae-Young et al 2011 Chin. Phys. Lett. 28 035202 |
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Abstract Self-assembly of silicon nanowire (SiNW) arrays is studied using SF6/O2 plasma treatment. The self-assembly method can be applied to single- and poly-crystalline Si substrates. Plasma conditions can control the length and diameter of the SiNW arrays. Lower reflectance of the wire arrays over the wavelength range 200–1100 nm is obtained. The conducting transparent indium-tin-oxide (ITO) electrode can be fully coated on the self-assembled SiNW arrays by sputtering. The ITO-coated SiNW solar cells show the same low surface light reflectance and a higher carrier collection efficiency than SiNW solar cells without ITO coating. An efficiency enhancement of around 3 times for ITO coated SiNW solar cells is demonstrated via experiments.
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| Keywords:
52.77.Bn
52.80.Pi
78.67.Uh
73.22.-f
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Received: 10 December 2010
Published: 28 February 2011
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| PACS: |
52.77.Bn
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(Etching and cleaning)
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52.80.Pi
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(High-frequency and RF discharges)
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78.67.Uh
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(Nanowires)
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73.22.-f
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(Electronic structure of nanoscale materials and related systems)
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