| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by in-situ MOCVD |
| ZHAO Wang, DONG Xin, ZHAO Long, SHI Zhi-Feng, WANG Jin, WANG Hui, XIA Xiao-Chuan, CHANG Yu-Chun, ZHANG Bao-Lin, DU Guo-Tong |
| State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 |
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| Cite this article: |
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ZHAO Wang, DONG Xin, ZHAO Long et al 2010 Chin. Phys. Lett. 27 128504 |
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Abstract ZnO transparent thin-film transistors with MgO gate dielectric were fabricated by in-situ metal organic chemical vapor deposition (MOCVD) technology. We used an uninterrupted growth method to simplify the fabrication steps and to avoid the unexpectable contaminating during epitaxy process. MgO layer is helpful to reduce the gate leakage current, as well as to achieve high transparency in visible light band, due to the wide band gap (7.7 eV) and high dielectric constant (9.8). The XRD measurement indicates that the ZnO layer has high crystal quality. The field effect mobility and the on/off current ratio of the device is 2.69 cm2V−1s−1 and ∼1×104, respectively.
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| Keywords:
85.30.Tv
81.15.Gh
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Received: 07 February 2010
Published: 23 November 2010
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| PACS: |
85.30.Tv
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(Field effect devices)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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[1] Sun X W and Kwok H S 1999 J. Appl. Phys. 86 408
[2] Bian J M, Li X M, Gao X D, Yu W D and Chen L D 2004 Appl. Phys. Lett. 84 541
[3] Singh A V, Mehra R M, Wakahara A and Yoshida A 2003 J. Appl. Phys. 93 396
[4] Bellingeri E, Marré D, Pellegrino L, Pallecchi I, Canu G, Vignolo M, Bernini C and Siri A S 2005 Superlattices and Micro Structures 38 446
[5] Fortunato E, Barquinha P, Pimentel A, Gonçalves A, Marques A, Pereira L and Martins R 2005 Thin Solid Films 487 205
[6] Shin P K, Aya Y, Ikegami T and Ebihara K 2008 Thin Solid Films 516 3767
[7] De Souza M M, Jejurikar S and Adhi K P 2008 Appl. Phys. Lett. 92 093509
[8] Remashan K, Jang J H, Hwang D K and Park S J 2007 Appl. Phys. Lett. 91 182101
[9] Zhan X A, Zhang J W, Zhang W F, Wang D, Bi Z, Bian X M and Hou X 2008 Thin Solid Films 516 3305
[10] Farmakis F V, Speliotis T, Alexandrou K P, Tsamis C, Kompitsas M, Fasaki I, Jedrasik P, Petersson G and Nilsson B 2008 Microelect. Eng. 85 1035
[11] Özgür Ü, Alivov Y I, Liu C, Teke A, Reshchikov M A, Doğan S, Avrutin V, Cho S J and Morkoç H 2005 J. Appl. Phys. 98 041301
[12] Morrison J L, Huso J, Hoeck H, Casey E, Mitchell J, Bergman L and Norton M G 2008 J. Appl. Phys. 104 123519
[13] Murphy T E, Chen D and Phillips J D 2004 Appl. Phys. Lett. 85 3208
[14] Maikap S, Rahaman S Z and Tien T C 2008 Nanotechnology 19 435202
[15] Cullity B D 1978 Elements of X-Ray Diffraction 2nd edn (Reading, MA: Addison-Wesley) p 102
[16] Sung M M, Kim C G, Kim J and Kim Y 2002 Chem. Mater. 14 826
[17] Masuda S, Kitamura K, Okumura Y, Miyatake S, Tabata H and Kawai T 2003 J. Appl. Phys. 93 1624
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