| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering |
| SUN Li-Jie, HE Dong-Kai, XU Xiao-Qiu, ZHONG Ze, WU Xiao-Peng, LIN Bi-Xia, FU Zhu-Xi
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Department of Physics, University of Science and Technology of China, Hefei 230026
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| Cite this article: |
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SUN Li-Jie, HE Dong-Kai, XU Xiao-Qiu et al 2010 Chin. Phys. Lett. 27 126802 |
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Abstract We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100°C in N2 and in O2 ambient become n−type and p-type, respectively. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photoluminescence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100°C in N2 ambient, and these defects play an important role for n−type conductivity of ZnO. While the ZnO films annealed at 1100°C in O2 ambient, the oxygen antisite contributes ZnO films to p-type.
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| Keywords:
68.55.Ag
61.72.Jj
71.55.Gs
73.61.Ga
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Received: 05 March 2010
Published: 23 November 2010
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