| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Effect of In Composition on Two-Dimensional Electron Gas in Wurtzite AlGaN/InGaN Heterostructures |
| KIM Bong-Hwan1**, PARK Seoung-Hwan1***, LEE Jung-Hee2, MOON Yong-Tae3 |
1Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk 712-702, R. Korea
2School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, R. Korea
3LG Corporate Institute of Technology, 16 Woomyeon-dong, Seocho-gu, Seoul 137-140, R. Korea
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| Cite this article: |
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KIM Bong-Hwan, PARK Seoung-Hwan, LEE Jung-Hee et al 2010 Chin. Phys. Lett. 27 118501 |
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Abstract The effect of In composition on two-dimensional electron gas in wurtzite AlGaN/InGaN heterostructures is theoretically investigated. The sheet carrier density is shown to increase nearly linearly with In mole fraction x, due to the increase in the polarization charge at the AlGaN/InGaN interface. The electron sheet density is enhanced with the doping in the AlGaN layer. The sheet carrier density is as high as 3.7×1013 cm−2 at the donor density of 10×1018 cm−3 for the HEMT structure with x=0.3. The contribution of additional donor density on the electron sheet density is nearly independent of the In mole fraction.
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| Keywords:
85.30.De
85.30.Tv
77.65.Ly
85.35.Be
02.60.Cb
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Received: 10 August 2010
Published: 22 October 2010
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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77.65.Ly
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(Strain-induced piezoelectric fields)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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02.60.Cb
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(Numerical simulation; solution of equations)
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