| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Rectifying and Photovoltage Properties of ZnO:Al/p-Si Heterojunction |
| MA Jing-Jing, JIN Ke-Xin, LUO Bing-Cheng, FAN Fei, XING Hui, ZHOU Chao-Chao, CHEN Chang-Le |
| Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University, Xi'an 710072 |
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| Cite this article: |
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MA Jing-Jing, JIN Ke-Xin, LUO Bing-Cheng et al 2010 Chin. Phys. Lett. 27 107304 |
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Abstract An Al-doped ZnO/p-Si heterojunction is fabricated by a laser molecular beam epitaxy technique. The abnormally high ideality factors (n≫2) of the prepared heterojunction are observed in the interim bias voltage range. A theoretical model is proposed to understand the much higher ideality factor of the special heterojunction diode. The ZnO:Al film shows metal−like conductivity with the electrical resistivity about 6.56×10-4⋅Ω⋅cm at room temperature. The temperature dependence of the photovoltage indicates that the photovoltaic effect of the Al-doped ZnO based heterojunction can be changed by the intrinsic metal-semiconductor transition at 120 K.
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| Keywords:
73.40.Lq
73.50.Pz
73.61.Ga
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Received: 11 May 2010
Published: 26 September 2010
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| PACS: |
73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.50.Pz
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(Photoconduction and photovoltaic effects)
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73.61.Ga
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(II-VI semiconductors)
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