| Original Articles |
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Optical and Magnetic Properties of Fe-Doped GaN Diluted Magnetic Semiconductors Prepared by MOCVD Method |
| TAO Zhi-Kuo;ZHANG Rong;CUI Xu-Gao;XIU Xiang-Qian;ZHANG Guo-Yu;XIE Zi-Li;GU Shu-Lin;SHI Yi;ZHENG You-Dou |
| Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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TAO Zhi-Kuo, ZHANG Rong, CUI Xu-Gao et al 2008 Chin. Phys. Lett. 25 1476-1478 |
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Abstract Fe-doped GaN thin films are grown on c-sapphires by metal organic chemical vapour deposition method (MOCVD). Crystalline quality and phase purity are characterized by x-ray diffraction and Raman scattering measurements. There are no detectable second phases formed during growth and no significant
degradation in crystalline quality as Fe ions are doped. Fe-related optical transitions are observed in photoluminescence spectra. Magnetic measurements reveal that the films show room-temperature ferromagnetic behaviour. The ferromagnetism may originate from carrier-mediated Fe-doped GaN diluted magnetic semiconductors or nanoscale iron clusters and Fe--N compounds which we have not detected.
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| Keywords:
81.15.Gh
81.05.Ea
75.50.Pp
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Received: 12 November 2007
Published: 31 March 2008
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.05.Ea
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(III-V semiconductors)
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75.50.Pp
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(Magnetic semiconductors)
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[1]Dietl T, Ohno H, Matsukura F, Cibert J and Ferrand D 2000 Science 287 1019
[2] Wolos A et al 2004 Phys. Rev. B 69 115210
[3] Wolos A et al 2004 Phys. Rev. B 70 245202
[4] Gerstmann U, Blumenau A T and Overhof H 2001 Phys.Rev. B 63 075204
[5] Graf T, Goennenwein S T B and Brandt M S 2003 Phys.Status Solidi B 239 277
[6] Sato K and Katayama-Yoshida H 2001 Jpn. J. Appl.Phys. II 40 L485
[7] Akinaga H, Nemeth S, De Boeck J, Nistor L, Bender H,Borghs G, Ofuchi H and Oshima M 2000 Appl. Phys. Lett 77 4377
[8] Theodoropoulou N, Hebard A F, Chu S N G, Overberg M E,Abernathy C R, Pearton S J, Wilson R G and Zavada J M 2001 Appl. Phys. Lett 79 3452
[9] Bonanni A, Simbrunner C, Wegscheider M, Przybylinska H,Wolos A, Sitter H and Jantsch W 2006 Phys. Status Solidi B 243 1701
[10] Bonanni A, Kiecana M, Simbrunner C, Li T, Sawicki M,Wegscheider M, Quast M, Przybylinska H, Navarro-Quezada A, JakielaR, Wolos A, Jantsch W and Dietl T 2007 Phys. Rev. B 75125210
[11] Shon Y, Lee S, Jeon H C, Park Y S, Kim D Y, Kang T W, KimJ S, Kima E K, Fu D J, Fan X J, Park Y J, Baik J M and Lee J L 2006 Appl. Phys. Lett. 89 082505
[12] Kane M H et al 2007 Phys. Status Solidi A 20461
[13] Haboeck U, Siegle H, Hoffmann A and Thomsen C 1998 Phys. Status Solidi C 0 1710 |
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