| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Anomalous Magneto-Transport Properties of Epitaxial Single-Crystal Bi Films on Si(111) |
| PANG Fei1,2, YIN Shu-Li1, LIANG Xue-Jin1, CHEN Dong-Min1
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1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
2Department of Physics, Renmin University of China, Beijing 100872
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| Cite this article: |
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PANG Fei, YIN Shu-Li, LIANG Xue-Jin et al 2010 Chin. Phys. Lett. 27 107102 |
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Abstract Anomalous transport properties of 40-nm-thick single-crystal Bi(111) films grown on Si(111)-7×7 substrates is investigated. The magnetoresistance (MR) of the films in perpendicular magnetic field shows a regular positive behavior in the temperature range 2−300 K, the MR in parallel field (B||) displays a series of interesting features. Specifically, we observe a change of the MR (B||) behavior from positive to negative when the temperature is below 10 K. In the range 10−170 K, the MR (B||) is negative in the investigated field of 9 T. When T>170 K, a positive MR appears in the high field regime. The low temperature MR(B||) behavior in the parallel field can be understood by the competition between weak localization and weak anti-localization (WAL). Furthermore, our results suggest that the WAL is dominated by the interface carriers.
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| Keywords:
71.70.Ej
72.15.Rn
73.20.-r
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Received: 21 May 2010
Published: 26 September 2010
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| PACS: |
71.70.Ej
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(Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)
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72.15.Rn
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(Localization effects (Anderson or weak localization))
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73.20.-r
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(Electron states at surfaces and interfaces)
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