| Original Articles |
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High-Rate Growth and Nitrogen Distribution in Homoepitaxial Chemical Vapour Deposited Single-crystal Diamond |
LI Hong-Dong;ZOU Guang-Tian;WANG Qi-Liang;CHENG Shao-Heng;LI Bo,
Lü Jian-Nan;Lü Xian-Yi;JIN Zeng-Sun |
| State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 |
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| Cite this article: |
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LI Hong-Dong, ZOU Guang-Tian, WANG Qi-Liang et al 2008 Chin. Phys. Lett. 25 1803-1806 |
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Abstract High rate (>50μm/h) growth of homoepitaxial single-crystal diamond (SCD) is carried out by microwave plasma chemical vapour deposition (MPCVD) with added nitrogen in the reactant gases of methane and hydrogen, using a
polycrystalline-CVD-diamond-film-made seed holder. Photoluminescence results indicate that the nitrogen concentration is spatially inhomogeneous in a large scale, either on the top surface or in the bulk of those as-grown SCDs. The presence of N-distribution is attributed to the facts: (i) a difference in N-incorporation efficiency and (ii) N-diffusion, resulting from the local growth
temperatures changed during the high-rate deposition process. In addition, the formed nitrogen-vacancy centres play a crucial role in N-diffusion through the growing crystal. Based on the N-distribution observed in the as-grown crystals, we propose a simple method to distinguish natural diamonds and man-made CVD SCDs. Finally, the disappearance of void defect on the top surface of SCDs is discussed to be related to a filling-in mechanism.
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| Keywords:
68.55.Ln
81.05.Uw
81.15.Gh
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Received: 02 January 2008
Published: 29 April 2008
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| PACS: |
68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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81.05.Uw
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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