| Original Articles |
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Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods |
| NIE Chao;ZHANG Rong;XIE Zi-Li;XIU Xiang-Qiang;LIU Bin;FU De-Yi;LIU Qi-Jia;HAN Ping;GU Shu-Lin;SHI Yi;ZHENG You-Dou |
| Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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NIE Chao, ZHANG Rong, XIE Zi-Li et al 2008 Chin. Phys. Lett. 25 1780-1783 |
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Abstract One-dimensional wurtzite InN nanowires and zincblende InN nanorods are prepared by chemical vapour deposition (CVD) method on natural cleavage plane (110) of GaAs. The growth direction of InN nanowires is [100], with wurtzite structure. The stable crystal structure of InN is wurtzite (w-InN), zincblende structure (z-InN) is only reported for 2D InN crystals before.
However, in this work, the zincblende InN nanorods [011] are synthesized and characterized. The SEM and TEM images show that every nanorod shapes a conical tip, which can be explained by the anisotropy of growth process and the theory of Ehrlich--Schwoebel barrier.
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| Keywords:
61.46.Km
62.23.Hj
81.07.Vb
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Received: 17 January 2008
Published: 29 April 2008
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| PACS: |
61.46.Km
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(Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))
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62.23.Hj
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(Nanowires)
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81.07.Vb
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(Quantum wires)
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