| Original Articles |
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A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si(111) Studied by HRXRD and RBS/Channeling |
| DING Zhi-Bo;WANG Kun;YAO Shu-De |
| Department of Technical Physics, School of Physics, Peking University, Beijing 100871 |
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| Cite this article: |
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DING Zhi-Bo, WANG Kun, YAO Shu-De 2008 Chin. Phys. Lett. 25 1131-1134 |
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Abstract Two hexagonal GaN epilayers (samples A and B) with multiple buffer layers and single buffer layer are grown on Si (111) by metal-organic vapour phase epitaxy (MOVPE). From the results of Rutherford backscattering (RBS)/channeling and high resolution x-ray diffraction (HRXRD), we obtain the lattice constant (a and c) of two GaN epilayers (aA=0.3190nm, cA=0.5184nm and aB=0.3192nm, cB=0.5179nm), the crystal quality of two GaN epilayers ( Xmin A}=4.87%, Xmin B=7.35% along <1213> axis) and the tetragonal
distortion eT of the two samples along depth (sample A is nearly fully relaxed, sample B is not relaxed enough). Comparing the results with the two samples, it is indicated that sample A with multiple buffer layers have better crystal quality than sample B with a single buffer layer, and it is a good way to grow GaN epilayer on Si (111) substrates using multiple buffer layers to improve crystal quality and to reduce lattice mismatch.
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| Keywords:
81.05.Ea
82.80.Yc
61.10.Nz
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Received: 22 November 2007
Published: 27 February 2008
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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82.80.Yc
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(Rutherford backscattering (RBS), and other methods ofchemical analysis)
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61.10.Nz
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