| Original Articles |
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Effect of Post-Annealing on Microstructural and Electrical Properties of N+ Ion-Implanted into ZnO:In Films |
KONG Chun-Yang;QIN Guo-Ping;RUAN Hai-Bo;NAN Mao;ZHU Ren-Jiang,
DAI Te-Li |
| College of Physics and information Technology, Chongqing Normal University, Chongqing 400047 |
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| Cite this article: |
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KONG Chun-Yang, QIN Guo-Ping, RUAN Hai-Bo et al 2008 Chin. Phys. Lett. 25 1128-1130 |
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Abstract We fabricate p-type conductive ZnO thin films on quartz glass substrates by codoping of In--N using radio frequency magnetron sputtering technique together with the direct implantation of acceptor dopants (nitrogen). The effects of thermal annealing on the structure and electrical properties of the ZnO films are investigated by an x-ray diffractometer (XRD) and a Hall
measurement system. It is found that the best p-type ZnO film subjected to annealed exhibits excellent electrical properties with a hole concentration of 1.22×1018cm-3, a Hall mobility of 2.192V-1s-1, and a low resistivity of about
2.33Ωcm, indicating that the presence of In may facilitates the incorporation of N into ZnO thin films.
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| Keywords:
81.05.Dz
73.61.Ga
81.15.Cd
61.72.Cc
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Received: 02 October 2007
Published: 27 February 2008
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