| Original Articles |
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Transformation from β-Ga2O3 to GaN Nanowires via Nitridation |
| WANG Peng-Wei;SONG Yi-Pu;ZHANG Xin-Zheng;XU Jun;YU Da-Peng |
| State Kay Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871 |
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| Cite this article: |
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WANG Peng-Wei, SONG Yi-Pu, ZHANG Xin-Zheng et al 2008 Chin. Phys. Lett. 25 1038-1041 |
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Abstract Element doping is an important way to modify the properties of semiconductor materials. In our previous work, it was found that nitrogen-doping in β-Ga2O3 nanowires can induce a novel luminescence emission (around 740nm) caused by generation of acceptor levels at the middle of the band gap of the β-Ga2O3
nanowires. Here we report that further heavy doping of nitrogen can transform the β-Ga2O3 nanowires completely into wurtzite structured GaN nanowires. Transmission electron microscopy (TEM), x-ray diffraction (XRD) and Raman spectrum are used to evaluate the transition process. Both XRD and Raman analysis reveal that the monoclinic β-Ga2O3 nanowires start phase transformation at a temperature around 850°C towards wurtzite structured GaN. Our results will be very helpful to profound our understanding of the doping induced effects and phase transformation in semiconductor compounds.
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61.46.-w
61.10.-i
30.-j
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Received: 21 November 2007
Published: 27 February 2008
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| PACS: |
61.46.-w
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(Structure of nanoscale materials)
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61.10.-i
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78
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(Optical properties, condensed-matter spectroscopy and other interactions of radiation and particles with condensed matter )
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30.-j
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