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Evolution of Structural Defects in SiOx Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment |
| HAO Xiao-Peng1,2;WANG Bao-Yi1;YU Run-Sheng1;WEI Long1;WANG Hui3;ZHAO De-Gang3; HAO Wei-Chang4 |
| 1Key Laboratory of Nuclear Analysis Techniques, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 1000492Graduate School of the Chinese Academy of Sciences, Beijing 1000393 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000834School of Science, Beijing University of Aeronautics and Astronautics, Beijing100083 |
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| Cite this article: |
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HAO Xiao-Peng, WANG Bao-Yi, YU Run-Sheng et al 2008 Chin. Phys. Lett. 25 1034-1037 |
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Abstract We study the structural defects in the SiOx film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples. [-SiO3]2- defects are the luminescence centres of the ultraviolet photoluminescence (PL) from the Fourier transform infrared spectroscopy and PL measurements. [-SiO3]2- is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000°C annealing, [-SiO3]2- defects still exist in the films.
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61.46.Hk
78.70.Bj
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Received: 30 October 2007
Published: 27 February 2008
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