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Room-Temperature Photonic Crystal Laser in H3 Cavity on InGaAsP/InP Slab |
| REN Gang;ZHENG Wan-Hua;ZHANG Ye-Jin;XING Ming-Xin;WANG Ke;DU Xiao-Yu;CHEN Liang-Hui |
| Nano-Optoelectronics Lab, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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REN Gang, ZHENG Wan-Hua, ZHANG Ye-Jin et al 2008 Chin. Phys. Lett. 25 981-984 |
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Abstract We fabricate and investigate two-dimensional photonic crystal H3 microcavities in an InGaAsP slab. The lasing action at room temperature is observed. The lasering threshold is 7mW under the pulsed pump of 0.75% duty cycle. The Q factor and the lasing mode characteristics are simulated by three-dimensional finite difference time domain method. The simulation result matches well with the experiment.
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| Keywords:
42.70.Qs
42.55.Tv
42.60.Da
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Received: 11 October 2007
Published: 27 February 2008
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| PACS: |
42.70.Qs
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(Photonic bandgap materials)
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42.55.Tv
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(Photonic crystal lasers and coherent effects)
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42.60.Da
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(Resonators, cavities, amplifiers, arrays, and rings)
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