| Original Articles |
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Broadband Infrared Luminescence from Bismuth-Doped GeS2--Ga2S3 Chalcogenide Glasses |
| DONG Guo-Ping1,2;XIAO Xiu-Di1,2;REN Jin-Jun1,2;RUAN Jian1,2;LIU Xiao-Feng1,2;QIU Jian-Rong3;LIN Chang-Gui4;TAO Hai-Zheng4;ZHAO Xiu-Jian4 |
| 1Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 2018002Graduate School of the Chinese Academy of Sciences, Beijing 1000493State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 3100274Key Laboratory of Silicate Materials Science and Engineering (Ministry of Education), Wuhan University of Technology, Wuhan 430070 |
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| Cite this article: |
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DONG Guo-Ping, XIAO Xiu-Di, REN Jin-Jun et al 2008 Chin. Phys. Lett. 25 1891-1894 |
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Abstract Near-infrared luminescence is observed from bismuth-doped GeS2--Ga2S3 chalcogenide glasses excited by an 808nm laser diode. The emission peak with a maximum at about 1260nm is observed in 80GeS2--20Ga2S3:0.5Bi
glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum (FWHM) is about 200nm. The broadband infrared luminescence of Bi-doped GeS2--Ga2S3 chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi+. Raman scattering is also conducted to clarify the structure of glasses. These Bi-doped GeS2--Ga2S3 chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.
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| Keywords:
78.55.Et
78.55.-m
78.30.-j
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Received: 14 January 2008
Published: 29 April 2008
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| PACS: |
78.55.Et
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(II-VI semiconductors)
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78.55.-m
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(Photoluminescence, properties and materials)
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78.30.-j
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(Infrared and Raman spectra)
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