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Room Temperature Ferromagnetism and Optical Tunability in Cu Doped GaN Nanowires |
| WANG Peng-Wei, ZHANG Xue-Jin, WANG Bai-Qi, ZHANG Xin-Zheng, YU Da-Peng |
| State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, Department of Physics, Peking University, Beijing 100871 |
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| Cite this article: |
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WANG Peng-Wei, ZHANG Xue-Jin, WANG Bai-Qi et al 2008 Chin. Phys. Lett. 25 3040-3043 |
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Abstract GaN nanowires doped with 2at.% and 6at.% Cu ions are synthesized by chemical vapour deposition method. Structural and compositional analyses demonstrate that the as-grown nanowires are of single crystal wurtzite GaN structure. Magnetic characterizations reveal that the doped GaN nanowires exhibit room temperature ferromagnetism. The measured saturation magnetic moments are 0.37μB and 0.47μB per Cu atom at 300K for Cu 2at.% and 6at.%, respectively. The photoluminescence spectra show that Cu dopant can tune the band gap of the GaN, which leads to a red shift of band-edge emission with increasing dopant concentration.
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| Keywords:
75.75.+a
78.67.-n
71.55.Eq
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Received: 21 March 2008
Published: 25 July 2008
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| PACS: |
75.75.+a
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78.67.-n
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(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
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71.55.Eq
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(III-V semiconductors)
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