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Influence of Ring Oxidation-Induced Stack Faults on Efficiency in Silicon Solar Cells |
| ZHOU Chun-Lan, WANG Wen-Jing, LI Hai-Ling, ZHAO Lei, DIAO Hong-Wei, LI-Xu-Dong |
| Solar Cell Technology Laboratory, Institute of Electrical Engineering, Chinese Academy of Sciences, PO Box 2703, Beijing 100080 ***Beijing Solar Energy Research Institute, Beijing, 100083 |
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| Cite this article: |
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ZHOU Chun-Lan, WANG Wen-Jing, LI Hai-Ling et al 2008 Chin. Phys. Lett. 25 3005-3008 |
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Abstract We observe a strong correlation between the ring oxidation-induced stack faults (OISF) formed in the course of phosphor diffusion and the efficiency of Czochralski-grown silicon solar cells. The main reason for ring-OISF formation and growth in substrate is the silicon oxidation and phosphorus diffusion process induced silicon self-interstitial point defect during POCl3 diffusion. The decreasing of minority carrier diffusion length in crystal silicon solar cell induced by ring-OISF defects is identified to be one of the major causes of efficiency loss.
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| Keywords:
71.72.-y
61.72.Nn
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Received: 10 March 2008
Published: 25 July 2008
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