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Comparison of Laser Performances of 5at.% Yb:Gd2xY2(1-x)SiO5 Crystals between Different Cutting Directions |
| YU Hai-Bo1, LIANG Xiao-Yan1, HE Jin-Ping1, LENG Yu-Xin1, LI Ru-Xin1, XU Zhi-Zhan1, ZHENG Li-He2, ZHAO Guang-Jun2, SU Liang-Bi2, XU Jun2 |
| 1State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 2018002Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 |
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| Cite this article: |
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YU Hai-Bo, LIANG Xiao-Yan, HE Jin-Ping et al 2008 Chin. Phys. Lett. 25 2496-2499 |
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Abstract We investigate the laser actions of 5at.% Yb:Gd2xY2(1-x)SiO5 (Yb:GYSO; x=0.1) crystals with different cutting directions, parallel and vertical to the growth axis. Our results show that the cutting direction of the sample plays an astonished role in the laser operation. The sample cut vertically to the growth axis possesses the favourable lasing characteristics. Its output power reaches 3.13W at 1060nm with a slope efficiency of 44.68% when the absorbed pump power is 8.9,W. In contrast, the sample cut parallel reaches only 1.65W at 1044nm with a slope efficiency of 33.76% with absorbed pump power of 7.99W. The absorption and emission spectra of the two samples are examined and the merit factor M is calculated. Our analysis is in agreement well with the experimental results. The wavelength tuning range of the superior sample covers from 1013.68nm to 1084.82nm.
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| Keywords:
42.55.Xi
42.55.Rz
42.60.Fc
42.70.Hj
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Received: 27 January 2008
Published: 26 June 2008
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| PACS: |
42.55.Xi
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(Diode-pumped lasers)
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42.55.Rz
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(Doped-insulator lasers and other solid state lasers)
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42.60.Fc
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(Modulation, tuning, and mode locking)
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42.70.Hj
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(Laser materials)
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[1] Krupke W F 2000 IEEE J. Sel. Top. Quantum Electron. 61287
[2] DeLoach L D, Payne S A, Chase L L, Smith L K, Kway W L and Krupke WF 1993 IEEE J. Quantum Electron. 29 1179
[3] Fan T Y 1993 IEEE J. Quantum Electron. 29 1457
[4] Brown D C 1997 IEEE J. Quantum Electron. 33 861
[5] Lacovara P, Choi H K, Wang C A, Aggarwal R L and Fan T Y 1991 Opt. Lett. 16 1089
[6] Kisel V E, Troshin A E, Tolstik N A, Shcherbitsky V G, Kuleshov NV, Matrosov V N, Matrosova T A and Kupchenko M I 2004 Opt. Lett. 29 2491
[7] Rivier S, Mateos X, Liu J H, Petrov V, Griebner U, Zorn M, WeyersM, Zhang H J, Wang J Y and Jiang M H 2006 Opt. Express 1411668
[8] Kuleshov N V, Lagatsky A A, Shcherbitsky V G, Mikhailov V P,Heumann E, Jensen T, Diening A and Huber G 1997 Appl. Phys. B 64 409
[9] Lucca A, Jacquemet M, Druon F, Balembois F, Georges P, Camy P,Doualan J L and Moncorg R 2004 Opt. Lett. 29 1879
[10] Campos S, Denoyer A, Jandl S, Viana B, Vivien D, Loiseau P andFerrand B 2004 J. Phys.: Condens. Matter 16 4579
[11] Yang W J, Li J, Zhang F, Zhang Y Y, Zhang Z G, Zhao G J, Zheng LH, Xu J and Su L B 2007 Opt. Express 15 8486
[12] Li W X, Pan H F, Ding L E, Zeng H P, Zhao G J, Yan C F, Su L B andXu J 2006 Opt. Express 14 686
[13] Du J, Liang X Y, Xu Y, Li R X, Zhao G J, Yan C F, Su L B, Xu J andXu Z Z 2007 Chin. Opt. Lett. 5 172
[14] Cooke D W, McClellan K J, Bennett B L, Roper J M, Whittaker M T,Muenchausen R E and Sze R C 2000 J. Appl. Phys. 88 7360
[15] Jie M Y, Zhao G J, Zeng X H, Su L B, Pang H Y, He X M and Xu J2005 J. Crystal Growth 227 175
[16] Du J, Liang X Y, Xu Y, Li R X, Xu Z Z, Yan C F, Zhao G J, Su L Band Xu J 2006 Opt. Express 14 3333
[17] Auzel F 1987 Spectroscopy of Solid-State Laser-TypeMaterials (New York: Plenum) p 293 |
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