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Ion-Sputter-Induced Nanodots on Si(110): Ion Energy Dependence |
| LI Wei-Qing1;LING Li2;QI Le-Jun1;YANG Xin-Ju3;FAN Wen-Bin1;GU Chang-Xin2;LU Ming1 |
| 1Department of Optical Science and Engineering and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433
2Department of Materials Science, Fudan University, Shanghai 200433
3Surface Physics Laboratory, Fudan University, Shanghai 200433 |
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| Cite this article: |
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LI Wei-Qing, LING Li, QI Le-Jun et al 2005 Chin. Phys. Lett. 22 919-922 |
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Abstract Nanodot arrays were formed on Si(110) surface under normal-incident Ar+ ion sputtering at substrate temperature of 800°C. The ion flux was 20μA/cm2, and the ion energies were 1-5keV. The surface was imaged by an atomic force microscope (AFM). It was found that with the increasing ion energy, the average ellipticity of the dots changes in an oscillating manner; meanwhile the average dot size increases monotonously. Based on a dynamic continuum model, and taking into consideration the asymmetry of the Ehrlich-Schwoebel diffusions along the <100> and <110> crystallographic directions, we carry out the simulations, which reproduce the experimental results qualitatively.
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| Keywords:
68.49.Sf
68.37.Ps
68.35.Bs
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Published: 01 April 2005
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| PACS: |
68.49.Sf
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(Ion scattering from surfaces (charge transfer, sputtering, SIMS))
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68.37.Ps
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(Atomic force microscopy (AFM))
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68.35.Bs
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