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A New Type of Photoelectric Response in a Double Barrier Structure with a Wide Quantum Well |
| ZHOU Xia; ZHENG Hou-Zhi |
| State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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ZHOU Xia, ZHENG Hou-Zhi 2005 Chin. Phys. Lett. 22 1222-1224 |
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Abstract We have calculated the photoelectric response in a specially designed double barrier structure. It has been verified that a transfer of the internal photovoltaic effect in the quantum well to the tunnelling transport through above-barrier quasibound states of the emitter barrier may give rise to a remarkable photocurrent.
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| Keywords:
72.40.+w
78.67.-n
73.63.-b
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Published: 01 May 2005
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| PACS: |
72.40.+w
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(Photoconduction and photovoltaic effects)
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78.67.-n
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(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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