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Photoluminescence Properties of Silicon Nanowires and Carbon Nanotube-Silicon Nanowire Composite Arrays |
| LI Meng-Ke1,2;LU Mei2;KONG Ling-Bin2;WANG Cheng-Wei1;GUO Xin-Yong3;LI Hu-Lin2 |
| 1Collage of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070
2Dapartment of Chemistry, Lanzhou University, Lanzhou 730000
3Key Laboratory of Lubrication and Functional Materials, Henan University, Kaifeng 475001 |
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| Cite this article: |
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LI Meng-Ke, LU Mei, KONG Ling-Bin et al 2002 Chin. Phys. Lett. 19 1703-1706 |
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Abstract Composite arrays of multi-wall carbon nanotubes (MWNTs) and silicon nanowires (SiNWs) are fabricated by means of the chemical vapor deposition method in porous anodic aluminum oxide (AAO) templates. The results of the scanning electron microscopy, high-resolution transmission electron microscopy, and transmission electron microscopy have shown that SiNWs are successful nested or filled in the hollow cavities of synthesized MWNTs array in AAO templates to form MWNTs-SiNWs composite arrays. The photoluminescence (PL) intensity degradation and a blue shift of PL peak position, usually created from the chemical instability of the SiNWs surface, are decreased and eliminated clearly in the composite arrays. The composite arrays of MWNTs-SiNWs exhibit more enhanced intensity and stability of PL performance than the SiNWs arrays deposited in AAO templates.
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| Keywords:
81.07.Bc
78.67.Bf
81.16.Be
85.35.Kt
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Published: 01 November 2002
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| PACS: |
81.07.Bc
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(Nanocrystalline materials)
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78.67.Bf
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(Nanocrystals, nanoparticles, and nanoclusters)
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81.16.Be
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(Chemical synthesis methods)
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85.35.Kt
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(Nanotube devices)
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