Chin. Phys. Lett.  2008, Vol. 25 Issue (11): 4158-4161    DOI:
Original Articles |
Fabrication and Characterization of Mg-Doped GaN Nanowires
ZHANG Dong-Dong, XUE Cheng-Shan, ZHUANG Hui-Zhao, HUANG Ying-Long, WANG Zou-Ping, WANG Ying, GUO Yong-Fu
Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014
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ZHANG Dong-Dong, XUE Cheng-Shan, ZHUANG Hui-Zhao et al  2008 Chin. Phys. Lett. 25 4158-4161
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Abstract Mg-doped GaN nanowires have been synthesized by ammoniating Ga2O3 films doped with Mg under flowing ammonia atmosphere at 850°C. The Mg-doped GaN nanowires are characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL). The results demonstrate that the nanowires are single crystalline with hexagonal wurzite structure. The diameters of the nanowires are 20-30nm and the lengths are 50-100μm. The GaN nanowires show three emission bands with well-defined PL peak at 3.45eV, 3.26eV, 2.95eV, respectively. The large distinct blueshift of the bandgap emission can be attributed to the Burstein--Moss effect. The peak at 3.26eV represents the transition from the conduction-band edge to the acceptor level AM (acceptor Mg). The growth mechanism of crystalline GaN nanowires is discussed briefly.
Keywords: 81.05.Ea      62.23.Hj      81.15.Cd     
Received: 25 June 2008      Published: 25 October 2008
PACS:  81.05.Ea (III-V semiconductors)  
  62.23.Hj (Nanowires)  
  81.15.Cd (Deposition by sputtering)  
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ZHANG Dong-Dong
XUE Cheng-Shan
ZHUANG Hui-Zhao
HUANG Ying-Long
WANG Zou-Ping
WANG Ying
GUO Yong-Fu
[1] Johnson J, Choi H, Knutsen K, Schaller R, Yang P and
Saykally R 2002 Nat. Mater. 1 106
[2] Martin C R 1994 Science 266 1961
[3] Duan X, Huang Y, Cui Y, Wang J and Lieber C M 2001
Nature. 409 66
[4] Liu B, Bando Y, Tang C, Xu F, Hu J and Golberg D 2005
J. Phys. Chem. B 109 17082
[5] Cui Y, Wei Q Q, Park H K and Lieber C M 2001
Science. 293 1289
[6] Huang Y, Duan X, Cui Y, Lauhon L J, Kim K H and Lieber C M
2001 Science 294 1313
[7] Shin T I, Lee H J, Song W Y, Kim S W and Yoon D H
[years????????] Colloids and surfaces A 4 14615
[8] Kuykendall T, Pauzauskie P, Lee S, Zhang Y, Goldberger J
and Yang P 2003 Nano. Lett. 3 1063
[9] Geelhaar L, Ch\`{eze C, Weber W M, Averbeck R and
Riechert H 2007 Appl. Phys. Lett. 91 093113
[10] Li J Y, Chen X L, Qiao Z Y, Cao Y G, He M and Xu T 2000
Appl. Phys. A 71 349
[11] Duan X and Lieber C M 2000 Am. J. Chem. Soc.
122 188
[12] Shi W S, Zheng Y F, Wang N and Lee C S 2001 Chem.
Phys. Lett. 345 377-380
[13] Wang Q, Sun Q and Jena P 2005 Phys. Rev. Lett.
95 167202
[14] Han S E, Oh H, Kim J, Seong H and Choi H 2005 Appl.
Phys. Lett. 87 062102
[15] Zhou S M 2006 Physica E 33 394
[16] Perlin P, Jauberthiecarillon C and Itie J P 1992
Phys. Rev. B 45 2312
[17] Monemar B 2001 Phys. Rev. B 10 676-1974
[18] Zhou SM, Zhang X H, Meng X and Lee S T 2004
Nanotechnology 15 1152
[19] Zolper J C, Crawford M H, Howard A J, Ramer J and Hersee
S D 1996 Appl. Phys. Lett. 68 200
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