| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Magnetic Properties and Antiferromagnetic Coupling in Inhomogeneous Zn1-xFexO Magnetic Semiconductor |
| DENG Jiang-Xia1, YAN Shi-Shen1, MEI Liang-Mo1, J. P. Liu2, B. Altuncevahir2, V. Chakka2, WANG Yong3, ZHANG Ze3, SUN Xiang-Cheng4, J. Lian4, K. Sun4 |
| 1School of Physics and National Key Laboratory of Crystal Materials, Shandong University, Jinan 2501002Department of Physics, the University of Texas at Arlington, Box 19059, Arlington, Texas 76019, USA3Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 1000224Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA. |
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| Cite this article: |
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DENG Jiang-Xia, YAN Shi-Shen, MEI Liang-Mo et al 2009 Chin. Phys. Lett. 26 027502 |
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Abstract Zn1-xFexO inhomogeneous oxide magnetic semiconductor films with high Fe concentration are prepared by sputtering, and fast annealing is carried out at different temperatures. It is found that magnetic properties are greatly modulated by controlling the composition inhomogeneity and subsequently fast annealing. Both ferromagnetic and paramagnetic components are found to coexist in the as-deposited Zn1-xFexO magnetic semiconductor. In particular, the antiferromagnetic coupling between the neighbouring local ferromagnetic regions is found in the as-deposited Zn0.23Fe0.77O film, and the antiferromagnetic coupling strength increases with increasing temperature from 110K to 300K. We believe that this unusual antiferromagnetic coupling is mediated by thermally activated hopping carriers.
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| Keywords:
75.50.Pp
75.50.Ee
73.61.Jc
68.37.Lp
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Received: 03 November 2008
Published: 20 January 2009
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| PACS: |
75.50.Pp
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(Magnetic semiconductors)
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75.50.Ee
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(Antiferromagnetics)
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73.61.Jc
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(Amorphous semiconductors; glasses)
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68.37.Lp
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(Transmission electron microscopy (TEM))
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