| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Enhanced Photoluminescence of InGaN/GaN Green Light-Emitting Diodes Grown on Patterned Sapphire Substrate |
| PEI Xiao-Jiang, GUO Li-Wei, WANG Xiao-Hui, WANG Yang, JIA Hai-Qiang, CHEN Hong, ZHOU Jun-Ming |
| Beijing national Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100190 |
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| Cite this article: |
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PEI Xiao-Jiang, GUO Li-Wei, WANG Xiao-Hui et al 2009 Chin. Phys. Lett. 26 028101 |
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Abstract Green InGaN/GaN based light-emitting diodes (LEDs) are fabricated both on planar and wet-etched patterned sapphire substrates by metalorganic vapour phase epitaxy (MOVPE). Their photoluminescence (PL) properties of the two samples are studied. The results indicate that the PL integral intensity of the green LED on the patterned substrate is nearly two times of that on the planar one within the whole measured temperature range. The enhanced PL intensity in the green LED on the patterned substrate is shown completely contributed from the extraction efficiency, but not from the internal quantum efficiency. The conclusion is supported by temperature-dependent PL analysis on the two samples, and the mechanisms are discussed..
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| Keywords:
81.65.Cf
85.60.Jb
85.40.Hp
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Received: 14 October 2008
Published: 20 January 2009
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| PACS: |
81.65.Cf
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(Surface cleaning, etching, patterning)
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85.60.Jb
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(Light-emitting devices)
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85.40.Hp
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(Lithography, masks and pattern transfer)
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