| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Preparation and Characterization of Transparent Conductive Nb-Doped ZnO Films by Radio-Frequency Sputtering |
| CAO Feng, WANG Yi-Ding, LIU Da-Li, YIN Jing-Zhi, GUO Bao-Jia, LI Lei, AN Yu-Peng |
| State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 |
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| Cite this article: |
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CAO Feng, WANG Yi-Ding, LIU Da-Li et al 2009 Chin. Phys. Lett. 26 034210 |
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Abstract Niobium-doped ZnO (NZO) transparent conductive films are deposited on glass substrates by rf sputtering at 300°C. Effects of sputtering power on the structural, morphologic, electrical, and optical properties of NZO films are investigated by x-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The minimum resistivity of 4.0×10-4Ω・cm is obtained from the film grown at the sputtering power of 170W. The average optical transmittance of the films is over 90%.
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| Keywords:
42.25.Fx
42.70.Km
78.20.-e
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Received: 18 December 2008
Published: 19 February 2009
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| PACS: |
42.25.Fx
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(Diffraction and scattering)
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42.70.Km
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(Infrared transmitting materials)
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78.20.-e
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(Optical properties of bulk materials and thin films)
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