Chin. Phys. Lett.  2009, Vol. 26 Issue (3): 037306    DOI: 10.1088/0256-307X/26/3/037306
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Fermi Level Unpinning and Schottky Barrier Modification by Ti, Sc and V Incorporation at NiSi2/Si Interface
GENG Li1, MAGYARI-KOPE Blanka2, ZHANG Zhi-Yong3, NISHI Yoshio2
1Department of Microelectronics, Xi'an Jiaotong University, Xi'an 7100492Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA3Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA
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GENG Li, MAGYARI-KOPE Blanka, ZHANG Zhi-Yong et al  2009 Chin. Phys. Lett. 26 037306
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Abstract A new method is proposed to modify the Schottky barrier height (SBH) for nickel silicide/Si contact. Chemical and electrical properties for NiSi2/Si interface with titanium, scandium and vanadium incorporation are investigated by first-principles calculations. The metal/semiconductor interface states within the gap region are greatly decreased, which is related to the diminutions of junction leakage when Ti-cap is experimentally used in nickel silicide/Si contact process. It leads to an unpinning metal/semiconductor interface. The SBH obeys the Schottky-Mott theory. Compared to Ti substitution, the SBH for electrons is reduced for scandium and increases for vanadium.
Keywords: 73.20.-r      73.30.+y     
Received: 13 October 2008      Published: 19 February 2009
PACS:  73.20.-r (Electron states at surfaces and interfaces)  
  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/3/037306       OR      https://cpl.iphy.ac.cn/Y2009/V26/I3/037306
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GENG Li
MAGYARI-KOPE Blanka
ZHANG Zhi-Yong
NISHI Yoshio
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