| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Improvement of Field Emission Characteristics of Copper Nitride Films with Increasing Copper Content |
WANG Tao, LI Rui-Shan, PAN Xiao-Jun, ZHANG Pei-Zeng, ZHOU Ming, SONG
Xi, XIE Er-Qing |
| Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 |
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| Cite this article: |
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WANG Tao, LI Rui-Shan, PAN Xiao-Jun et al 2009 Chin. Phys. Lett. 26 066801 |
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Abstract A copper nitride (Cu3N) thin film is deposited on a Si substrate by the reactive magnetron sputtering method. The XPS measurements of the composite film indicate that the Cu content in the film is increased to 80.82at.% and the value of the Cu/N ratio to 4.2:1 by introducing 4% H2 into the reactive gas. X-ray diffraction measurements show that the film is composed of Cu3N crystallites with an anti-ReO3 structure. The effects of the increase of copper content on the field emission characteristics of the Cu3N thin film are investigated. Significant improvement in emission current density and emission repeatability could be attributed to the geometric field enhancement, caused by numerous surface nanotips, and the decrease of resistivity of the film.
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| Keywords:
68.55.Aj
79.70.+q
61.05.Cp
68.37.Hk
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Received: 15 January 2009
Published: 01 June 2009
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| PACS: |
68.55.aj
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(Insulators)
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79.70.+q
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(Field emission, ionization, evaporation, and desorption)
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61.05.cp
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(X-ray diffraction)
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68.37.Hk
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(Scanning electron microscopy (SEM) (including EBIC))
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