| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
A Physics-Based Charge-Control Model for InP DHBT Including Current-Blocking Effect |
| GE Ji, JIN Zhi, SU Yong-Bo, CHENG Wei, WANG Xian-Tai, CHEN Gao-Peng, LIU Xin-Yu |
| Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 |
|
| Cite this article: |
|
GE Ji, JIN Zhi, SU Yong-Bo et al 2009 Chin. Phys. Lett. 26 077302 |
|
|
|
|
Abstract We develop a physics-based charge-control InP double heterojunction bipolar transistor model including three important effects: current blocking, mobile-charge modulation of the base-collector capacitance and velocity-field modulation in the transit time. The bias-dependent base-collector depletion charge is obtained analytically, which takes into account the mobile-charge modulation. Then, a measurement based voltage-dependent transit time formulation is implemented. As aresult, over a wide range of biases, the developed model shows good agreement between the modeled and measured S-parameters and cutoff frequency. Also, the model considering current blocking effect demonstrates more accurate prediction of the output characteristics than conventional vertical bipolar inter company results.
|
| Keywords:
73.40.Kp
85.30.De
71.55.Eq
|
|
|
Received: 27 September 2008
Published: 02 July 2009
|
|
| PACS: |
73.40.Kp
|
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
|
| |
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
| |
71.55.Eq
|
(III-V semiconductors)
|
|
|
|
|
|
[1] Fukuyama H et al 2004 International Conference onIndium Phosphide and Related Materials (Kagoshima, Japan 31 May--4June 2004) p 659
[2] Paidi V K et al 2005 IEEE Trans. Microwave Theor.Technol. 53 598
[3] McAndrew C et al 1995 Bipolar/BiCMOS Circuits andTechnology Meeting (Minneapo1is, MN 1--3 October 1995) p 170
[4] Jin Z et al 2008 Chin. Phys. Lett. 25 2683
[5] Chuang Y J ea al 2006 International Conference onCompound Semiconductor Manufacturing Technology (Vancouver BC,Canada 24--27 April 2006) p 261
[6] Samelis A 1999 IEEE Trans. Microwave Theor. Technol. 47 642
[7] Ge J et al 2008 Chin. J. Semiconduct. 29 2270
[8] Iwamoto M et al 2003 Microwave Symposium Digest, IEEEMTT-S International (Philadelphia, PA, USA 8--13 June 2003) p 635
[9] Stuenkel M et al 2007 International Conference onCompound Semiconductor Manufacturing Technology (Austin, Texas, USA14--17 May 2007) p 65
[10] Johansen T K et al 2006 Microwave Symposium Digest,IEEE MTT-S International (San Francisco, CA, USA 11--16 June 2006)p 655
[11] Jin Z et al 2008 Chin. Phys. Lett. 25 2686
[12] B F Chu-Kung et al 2004 International Conference onCompound Semiconductor Manufacturing Technology (Miami Beach,Florida, USA May 2004)
[13] Liu W 1998 Handbook of I$\!$I$\!$I--V HeterojunctionBipolar Transistors (New York: Wiley-Interscience)
[14] Schroter M and Lee T Y 1999 Trans. Electron Devices 46 288
[15] Jin Z et al 2008 Chin. Phys. Lett. 25 3075 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
