| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Photoluminescence of a ZnO/GaN Heterostructure Interface |
| LIU Shu-Jian1, YU Qing-Xuan1,2, WANG Jian2, LIAO Yuan1, LI Xiao-Guang1 |
| 1Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 2300262State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 |
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| Cite this article: |
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LIU Shu-Jian, YU Qing-Xuan, WANG Jian et al 2009 Chin. Phys. Lett. 26 077805 |
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Abstract Growth of a ZnO/GaN heterostructure is carried out using pulsed laser deposition. By etching the ZnO layer from the ZnO/GaN structure, the photoluminescence (PL) of the associated GaN layer shows that the donor-acceptor luminescence of GaN shifts to about 3.27eV, which is consistent with the electroluminescence (EL) of n-ZnO/p-GaN already reported. XPS shows that oxygen diffuses into the GaN crystal lattice from the surface to 20nm depth. The PL spectra at different temperatures and excitation densities show that oxygen plays the role of potential fluctuation. The associated PL results of the interface in these LEDs could be helpful to understand the mechanism of EL spectra for ZnO/GaN p-n junctions.
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| Keywords:
78.55.Cr
68.35.Fx
71.55.Eq
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Received: 10 February 2009
Published: 02 July 2009
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